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1 A, 900 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
2SK3301(2-7B3B)
Manufacturer:
Toshiba
Product Range:
Transistors (BJT)
2SK3301(2-7B3B)

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Avalanche Energy Rating (Eas)140 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)1 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max20 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)2 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min900 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package Description2-7B3B, 3 PIN
Operating ModeENHANCEMENT
Number of Terminals2
Terminal PositionSINGLE
Number of Elements1
Package StyleSMALL OUTLINE


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