12.2 A, 30 V, 0.0132 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFE

The actual product may differ from image shown

Product Information

Terminal Form	GULL WING
Power Dissipation Ambient-Max	2.3 W
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	12.2 A
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0132 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	30 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	ROHS COMPLIANT, SOP-8
Operating Mode	ENHANCEMENT
Number of Terminals	8
Terminal Position	DUAL
Number of Elements	2
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price