1600 mA, 20 V, 4 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOS

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	2 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Status	Discontinued
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.6 A
Drain Current-Max (Abs) (ID)	1.6 A
Sub Category	Other Transistors
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	2 ohm
Moisture Sensitivity Level	NOT SPECIFIED
DS Breakdown Voltage-Min	20 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL AND P-CHANNEL
Number of Terminals	14
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	2 W
JESD-30 Code	R-CDIP-T14
Terminal Position	DUAL
Feedback Cap-Max (Crss)	50 pF
Number of Elements	4
Package Style	IN-LINE

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