120 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB

The actual product may differ from image shown

Product Information

Terminal Finish	TIN LEAD
Terminal Form	GULL WING
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Additional Feature	HIGH INPUT IMPEDANCE
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.1200 A
Feedback Cap-Max (Crss)	8 pF
Sub Category	Other Transistors
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	12 ohm
Moisture Sensitivity Level	NOT SPECIFIED
DS Breakdown Voltage-Min	100 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	YES
JEDEC-95 Code	TO-236AB
Mfr Package Description	SAME AS SOT-23, 3 PIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	P-CHANNEL
Number of Terminals	3
REACH Compliant	Yes
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	0.3600 W
JESD-30 Code	R-PDSO-G3
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price