2.7 A, 350 V, 6 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-3

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	PIN/PEG
Power Dissipation Ambient-Max	100 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	ROUND
Status	Discontinued
Package Body Material	METAL
Turn-on Time-Max (ton)	80 ns
Transistor Element Material	SILICON
Drain Current-Max (ID)	2.7 A
Drain Current-Max (Abs) (ID)	2.7 A
Sub Category	Other Transistors
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	6 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	5 A
Turn-off Time-Max (toff)	150 ns
DS Breakdown Voltage-Min	350 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
JEDEC-95 Code	TO-3
Case Connection	DRAIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	P-CHANNEL
Number of Terminals	2
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	100 W
JESD-30 Code	O-MBFM-P2
Terminal Position	BOTTOM
Feedback Cap-Max (Crss)	50 pF
Number of Elements	1
Package Style	FLANGE MOUNT

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