0.2 A, 600 V, 25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	FLAT
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Additional Feature	LOW THRESHOLD
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.2000 A
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	25 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	0.6000 A
DS Breakdown Voltage-Min	600 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	YES
JEDEC-95 Code	TO-243AA
Case Connection	DRAIN
Mfr Package Description	SAME AS SOT-89, 3 PIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
REACH Compliant	Yes
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	1.6 W
JESD-30 Code	R-PSSO-F3
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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