1200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92

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Product Information

Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	1 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
Package Shape	ROUND
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.2 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.3500 ohm
JESD-30 Code	O-PBCY-T3
DS Breakdown Voltage-Min	60 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
JEDEC-95 Code	TO-92
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
Feedback Cap-Max (Crss)	65 pF
Terminal Position	BOTTOM
Number of Elements	1
Package Style	CYLINDRICAL

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