100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET

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Product Information

Terminal Finish	TIN LEAD
Terminal Form	NO LEAD
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	UNSPECIFIED
Additional Feature	HIGH INPUT IMPEDANCE
Status	Active
Package Body Material	UNSPECIFIED
Transistor Element Material	SILICON
Drain Current-Max (Abs) (ID)	0.4600 A
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	4 ohm
Moisture Sensitivity Level	NOT SPECIFIED
DS Breakdown Voltage-Min	100 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	YES
Mfr Package Description	DIE
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
REACH Compliant	Yes
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	X-XUUC-N
Terminal Position	UPPER
Feedback Cap-Max (Crss)	5 pF
Number of Elements	1
Package Style	UNCASED CHIP

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