0.3 A, 100 V, 8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-243AA

The actual product may differ from image shown

Product Information

Terminal Finish	TIN LEAD
Terminal Form	FLAT
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Turn-on Time-Max (ton)	10 ns
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.3000 A
Feedback Cap-Max (Crss)	5 pF
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	8 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	1.3 A
Turn-off Time-Max (toff)	11 ns
DS Breakdown Voltage-Min	100 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	YES
JEDEC-95 Code	TO-243AA
Case Connection	DRAIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	1.6 W
JESD-30 Code	R-PSSO-F3
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price