2 A, 200 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

The actual product may differ from image shown

Product Information

Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2 A
Drain Current-Max (Abs) (ID)	2 A
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE
Drain-source On Resistance-Max	3 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	3.5 A
DS Breakdown Voltage-Min	200 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
JEDEC-95 Code	TO-220AB
Mfr Package Description	TO-220, 3 PIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	45 W
JESD-30 Code	R-PSFM-T3
Terminal Position	SINGLE
Number of Elements	1
Package Style	FLANGE MOUNT

Offer your acceptable price, and we may make you satisfied.Your Target Price