1.5 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220

The actual product may differ from image shown

Product Information

Terminal Finish	TIN LEAD
Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	50 W
Operating Temperature-Max	150 Cel
Qualification Status	COMMERCIAL
JESD-609 Code	e0
Package Shape	RECTANGULAR
Status	Discontinued
Package Body Material	PLASTIC/EPOXY
Turn-on Time-Max (ton)	30 ns
Transistor Element Material	SILICON
Drain Current-Max (ID)	1.5 A
Drain Current-Max (Abs) (ID)	1.5 A
Sub Category	FET General Purpose Power
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	4 ohm
Moisture Sensitivity Level	NOT SPECIFIED
Pulsed Drain Current-Max (IDM)	5 A
Turn-off Time-Max (toff)	125 ns
DS Breakdown Voltage-Min	500 V
FET Technology	METAL-OXIDE SEMICONDUCTOR
Transistor Application	SWITCHING
Surface Mount	NO
JEDEC-95 Code	TO-220AB
Case Connection	DRAIN
Mfr Package Description	TO-220, 3 PIN
Operating Mode	ENHANCEMENT MODE
Polarity/Channel Type	N-CHANNEL
Number of Terminals	3
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max (Abs)	50 W
JESD-30 Code	R-PSFM-T3
Terminal Position	SINGLE
Feedback Cap-Max (Crss)	50 pF
Number of Elements	1
Package Style	FLANGE MOUNT

Offer your acceptable price, and we may make you satisfied.Your Target Price