0.41 A, 290 V, 6 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	NO LEAD
Package Shape	SQUARE
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.4100 A
EU RoHS Compliant	Yes
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	6 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	2 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	290 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	5 X 5 MM, 1 MM HEIGHT, GREEN, QFN-14
Operating Mode	ENHANCEMENT
Number of Terminals	14
Terminal Position	QUAD
Number of Elements	1
Package Style	CHIP CARRIER

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