1 A, 400 V, 10 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	PLASTIC/EPOXY
Mfr Package Description	IPAK-3
Pulsed Drain Current-Max (IDM)	4 A
Terminal Form	THROUGH-HOLE
Operating Mode	ENHANCEMENT
Package Style	IN-LINE
Avalanche Energy Rating (Eas)	20 mJ
Transistor Application	SWITCHING
Drain Current-Max (ID)	1 A
Transistor Element Material	SILICON
FET Technology	METAL-OXIDE SEMICONDUCTOR
Terminal Position	SINGLE
Transistor Type	GENERAL PURPOSE POWER
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	10 ohm
Number of Terminals	3
DS Breakdown Voltage-Min	400 V
Number of Elements	1

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