10 A, 150 V, 0.2 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	THROUGH-HOLE
Power Dissipation Ambient-Max	5 W
Avalanche Energy Rating (Eas)	100 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	10 A
Configuration	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.2000 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	40 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	150 V
Case Connection	ISOLATED
Mfr Package Description	SIP-12
Operating Mode	ENHANCEMENT
Number of Terminals	12
Terminal Position	SINGLE
Number of Elements	4
Package Style	FLANGE MOUNT

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