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128M X 72 DDR DRAM MODULE, 0.7 ns, DMA200

Manufacturer:
Samsung
Product Range:
Memory
M485L2829BU0-LB3

Product Information

Terminal FinishNOT SPECIFIED
Access ModeFOUR BANK PAGE BURST
Terminal FormNO LEAD
Operating Temperature-Max70 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)2.5 V
Temperature GradeCOMMERCIAL
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialUNSPECIFIED
Number of Functions1
Memory Density9.66E9 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)2.7 V
Number of Ports1
Supply Voltage-Min (Vsup)2.3 V
Organization128M X 72
Memory Width72
Mfr Package DescriptionSODIMM-200
Operating ModeSYNCHRONOUS
Number of Terminals200
Terminal PositionDUAL
Access Time-Max (tRAC)0.7000 ns
Package StyleMICROELECTRONIC ASSEMBLY
Memory IC TypeDDR DRAM MODULE


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