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128M X 8 FLASH 2.7V PROM, 30 ns, PBGA63

Manufacturer:
Samsung
Product Range:
Memory
K9K1G08U0B-GIB00

Product Information

Terminal Pitch0.8000 mm
Terminal FormBALL
Operating Temperature-Max85 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)3.3 V
Temperature GradeINDUSTRIAL
Package ShapeRECTANGULAR
StatusACTIVE
Operating Temperature-Min-40 Cel
Number of Words1.28E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Access Time-Max (tACC)30 ns
Memory Density1.02E9 deg
Supply Voltage-Max (Vsup)3.6 V
Supply Voltage-Min (Vsup)2.7 V
Organization128M X 8
Memory Width8
Surface MountYes
Parallel/SerialPARALLEL
Mfr Package DescriptionFBGA-63
Operating ModeASYNCHRONOUS
Number of Terminals63
Terminal PositionBOTTOM
TechnologyCMOS
Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH
Memory IC TypeFLASH 2.7V PROM


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