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128M X 4 SYNCHRONOUS DRAM, 5.4 ns, PDSO54

Manufacturer:
Samsung
Product Range:
Memory
K4S1G0632D-UC750

Product Information

Terminal FinishTIN BISMUTH
Terminal Pitch0.8000 mm
Access ModeFOUR BANK PAGE BURST
Terminal FormGULL WING
Operating Temperature-Max70 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)3.3 V
Temperature GradeCOMMERCIAL
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density5.37E8 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)3.6 V
Number of Ports1
China RoHS CompliantYes
Supply Voltage-Min (Vsup)3 V
Organization128M X 4
Memory Width4
Surface MountYes
Mfr Package DescriptionROHS COMPLIANT, STACKED, TSOP2-54
Operating ModeSYNCHRONOUS
Number of Terminals54
Terminal PositionDUAL
Access Time-Max (tRAC)5.4 ns
TechnologyCMOS
Package StyleSMALL OUTLINE, PIGGYBACK, THIN PROFILE
Memory IC TypeSYNCHRONOUS DRAM


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