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128M X 4 DDR DRAM, 0.65 ns, PDSO66

Manufacturer:
Samsung
Product Range:
Memory
K4H510438J-LLCC0

Product Information

Terminal FinishNOT SPECIFIED
Terminal Pitch0.6500 mm
Access ModeFOUR BANK PAGE BURST
Terminal FormGULL WING
Operating Temperature-Max70 Cel
Number of Words Code128M
Supply Voltage-Nom (Vsup)2.5 V
Temperature GradeCOMMERCIAL
Package ShapeRECTANGULAR
StatusEOL/LIFEBUY
Lead FreeYes
Operating Temperature-Min0.0 Cel
Number of Words1.34E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density5.37E8 deg
EU RoHS CompliantYes
Supply Voltage-Max (Vsup)2.7 V
Number of Ports1
Supply Voltage-Min (Vsup)2.3 V
Organization128M X 4
Memory Width4
Surface MountYes
Mfr Package Description0.400 X 0.875 INCH, 0.65 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, TSOP2-66
Operating ModeSYNCHRONOUS
Number of Terminals66
Terminal PositionDUAL
Access Time-Max (tRAC)0.6500 ns
TechnologyCMOS
Package StyleSMALL OUTLINE, THIN PROFILE
Memory IC TypeDDR DRAM


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