IRF9Z24N

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Product Information

HEXFET Power MOSFETs Discrete P-Channel
Package	TO-220AB
Circuit	Discrete
VBRDSS (V)	-55
VGs Max (V)	20
RDS(on) 1.8V (mOhms)
RDS(on) Max 2.5V (mOhms)
RDS(on) Max 2.7V (mOhms)
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	175.0
ID @ TC = 25C (A)	-12
ID @ TC = 100C (A)	-8.5
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	12.7
Qgd Typ (nC)	6.7
Rth(JC) (K/W)	3.3
Power Dissipation @ TC = 25C (W)	45
Power Dissipation @ TA = 25C (W)

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