IRF5210S

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Product Information

HEXFET Power MOSFETs Discrete P-Channel
Package	D2-Pak
Circuit	Discrete
VBRDSS (V)	-100
VGs Max (V)	20
RDS(on) 1.8V (mOhms)
RDS(on) Max 2.5V (mOhms)
RDS(on) Max 2.7V (mOhms)
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	60.0
ID @ TC = 25C (A)	-.40
ID @ TC = 100C (A)	-0.29
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	120.0
Qgd Typ (nC)	64.7
Rth(JC) (K/W)	0.75
Power Dissipation @ TC = 25C (W)	3.8
Power Dissipation @ TA = 25C (W)

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