IRF1010ES

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	D2-Pak
Circuit	Discrete
VBRDSS (V)	60
VGs Max (V)	20
RDS(on) Max 4.5V (mOhms)
RDS(on) Max 10V (mOhms)	12
ID @ TC = 25C (A)	83
ID @ TC = 100C (A)	59
ID @ TA = 25C (A)
ID @ TA = 70C (A)
Qg Typ (nC)	86.6
Qgd Typ (nC)	29.3
Rth(JC) (K/W)	0.9
Power Dissipation @ TC = 25C (W)	170
Power Dissipation @ TA = 25C (W)
Package Class Can	Surface Mount with Leads

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