IRF5851

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Product Information

HEXFET Power MOSFETs Dual N and P-Channel
Package	Micro 6
Circuit	1 N / 1 P
\|BVDSS\|	20
VGs Max (V)	12
RDS(on) 2.7V N-Channnel (mOhms)	120.0
RDS(on) 2.7V P-Channnel (mOhms)	220.0
RDS(on) 4.5V N-Channnel (mOhms)	90.0
RDS(on) 4.5V P-Channnel (mOhms)	135.0
RDS(on) 10V N-Channnel (mOhms)
RDS(on) 10V P-Channnel (mOhms)
ID @ TA = 25C N-Channel (A)	2.7
ID @ TA = 25C P-Channel (A)	-2.2
ID @ TA = 70C N-Channel (A)	2.2
ID @ TA = 70C P-Channel (A)	-1.7
Qg Typ N-Channel (nC)	4
Qg Typ P-Channel (nC)	3.6
Qgd Typ N-Channel (nC)	0.95
Qgd Typ P-Channel (nC)	0.66
Rth(JA) (K/W)	130
Power Dissipation (W)	0.96

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