IRF7329

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Product Information

HEXFET Power MOSFETs Dual P-Channel
Package	SO-8
Circuit	DUAL P
\|BVDSS\|	-12
VGs Max (V)	8
RDS(on) 2.7V P-Channnel (mOhms)	21.0
RDS(on) 4.5V P-Channnel (mOhms)	17.0
RDS(on) 10V P-Channnel (mOhms)
ID @ TA = 25C P-Channel (A)	-9.2
ID @ TA = 70C P-Channel (A)	-7.4
Qg Typ P-Channel (nC)	38.0
Qgd Typ P-Channel (nC)	8.1
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

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