IRF7555

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Product Information

HEXFET Power MOSFETs Dual P-Channel
Package	Micro 8
Circuit	DUAL P
\|BVDSS\|	-20
VGs Max (V)	12
RDS(on) 2.7V P-Channnel (mOhms)	105.0
RDS(on) 4.5V P-Channnel (mOhms)	55.0
RDS(on) 10V P-Channnel (mOhms)
ID @ TA = 25C P-Channel (A)	-4.3
ID @ TA = 70C P-Channel (A)	-3.4
Qg Typ P-Channel (nC)	10.0
Qgd Typ P-Channel (nC)	2.5
Rth(JA) (K/W)	100
Power Dissipation (W)	1.25

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