IRF7341Q

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Product Information

HEXFET Power MOSFETs Dual N-Channel
Package	SO-8
Circuit	DUAL N
\|BVDSS\|	55
VGs Max (V)	20
RDS(on) 2.7V N-Channnel (mOhms)
RDS(on) 4.5V N-Channnel (mOhms)	65.0
RDS(on) 10V N-Channnel (mOhms)	50.0
ID @ TA = 25C N-Channel (A)	5.1
ID @ TA = 70C N-Channel (A)	4.2
Qg Typ N-Channel (nC)	29.0
Qgd Typ N-Channel (nC)	7.3
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.4

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