IRF7101

The actual product may differ from image shown

Product Information

HEXFET Power MOSFETs Dual N-Channel
Package	SO-8
Circuit	DUAL N
\|BVDSS\|	20
VGs Max (V)	12
RDS(on) 2.7V N-Channnel (mOhms)
RDS(on) 4.5V N-Channnel (mOhms)	150.0
RDS(on) 10V N-Channnel (mOhms)	100.0
ID @ TA = 25C N-Channel (A)	3.5
ID @ TA = 70C N-Channel (A)	2.3
Qg Typ N-Channel (nC)	10.0
Qgd Typ N-Channel (nC)	2.4
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

Offer your acceptable price, and we may make you satisfied.Your Target Price