IRF7105

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Product Information

HEXFET Power MOSFETs Dual N and P-Channel
Package	SO-8
Circuit	1 N / 1 P
\|BVDSS\|	25
VGs Max (V)	20
RDS(on) 2.7V N-Channnel (mOhms)
RDS(on) 2.7V P-Channnel (mOhms)
RDS(on) 4.5V N-Channnel (mOhms)	160.0
RDS(on) 4.5V P-Channnel (mOhms)	400.0
RDS(on) 10V N-Channnel (mOhms)	100.0
RDS(on) 10V P-Channnel (mOhms)	250.0
ID @ TA = 25C N-Channel (A)	3.5
ID @ TA = 25C P-Channel (A)	-2.3
ID @ TA = 70C N-Channel (A)	2.8
ID @ TA = 70C P-Channel (A)	-1.8
Qg Typ N-Channel (nC)	9.4
Qg Typ P-Channel (nC)	10.0
Qgd Typ N-Channel (nC)	3.1
Qgd Typ P-Channel (nC)	2.8
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

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