IRF7317

The actual product may differ from image shown

Product Information

HEXFET Power MOSFETs Dual N and P-Channel
Package	SO-8
Circuit	1 N / 1 P
\|BVDSS\|	20
VGs Max (V)	12
RDS(on) 2.7V N-Channnel (mOhms)	46.0
RDS(on) 2.7V P-Channnel (mOhms)	98.0
RDS(on) 4.5V N-Channnel (mOhms)	29.0
RDS(on) 4.5V P-Channnel (mOhms)	58.0
RDS(on) 10V N-Channnel (mOhms)
RDS(on) 10V P-Channnel (mOhms)
ID @ TA = 25C N-Channel (A)	6.6
ID @ TA = 25C P-Channel (A)	-5.3
ID @ TA = 70C N-Channel (A)	5.3
ID @ TA = 70C P-Channel (A)	-4.3
Qg Typ N-Channel (nC)	18.0
Qg Typ P-Channel (nC)	19.0
Qgd Typ N-Channel (nC)	6.2
Qgd Typ P-Channel (nC)	7.7
Rth(JA) (K/W)	62.5
Power Dissipation (W)	2.0

Offer your acceptable price, and we may make you satisfied.Your Target Price