IRF7210

The actual product may differ from image shown

Product Information

HEXFET Power MOSFETs Discrete P-Channel
Package	SO-8
Circuit	Discrete
VBRDSS (V)	-12
VGs Max (V)	12
RDS(on) 1.8V (mOhms)
RDS(on) Max 2.5V (mOhms)	10.0
RDS(on) Max 2.7V (mOhms)
RDS(on) Max 4.5V (mOhms)	7.0
RDS(on) Max 10V (mOhms)
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	-16.0
ID @ TA = 70C (A)	-12
Qg Typ (nC)	212.0
Qgd Typ (nC)	52.0
Rth(JC) (K/W)	50 (JA)
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	2.50

Offer your acceptable price, and we may make you satisfied.Your Target Price