IRF7601

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Product Information

HEXFET Power MOSFETs Discrete N-Channel
Package	Micro 8
Circuit	Discrete
VBRDSS (V)	20
VGs Max (V)	12
RDS(on) Max 4.5V (mOhms)	35
RDS(on) Max 10V (mOhms)
ID @ TC = 25C (A)
ID @ TC = 100C (A)
ID @ TA = 25C (A)	5.7
ID @ TA = 70C (A)	4.6
Qg Typ (nC)	14
Qgd Typ (nC)	6.3
Rth(JC) (K/W)	70 (JA)
Power Dissipation @ TC = 25C (W)
Power Dissipation @ TA = 25C (W)	1.8
Package Class Can	Surface Mount with Leads

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