0.5 A, 200 V, 5.5 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MO

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Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.5000 A
EU RoHS Compliant	Yes
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Drain-source On Resistance-Max	5.5 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	2 A
Channel Type	N-CHANNEL AND P-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	200 V
Transistor Application	SWITCHING
Surface Mount	Yes
Mfr Package Description	3.95 X 4.90 MM, 1.27 MM PITCH, PLASTIC, FP-8DAV, SOP-8
Operating Mode	ENHANCEMENT
Number of Terminals	8
Terminal Position	DUAL
Number of Elements	2
Package Style	SMALL OUTLINE

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