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0.7 A, 600 V, 4.5 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
HAT2179R-EL-E
Manufacturer:
Renesas Electronics
Product Range:
Transistors (BJT)
HAT2179R-EL-E

Product Information

Terminal FinishNOT SPECIFIED
Terminal FormGULL WING
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)0.7000 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max4.5 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)2 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min600 V
Transistor ApplicationSWITCHING
Surface MountYes
Mfr Package Description4.90 X 3.95 MM, PLASTIC, SOP-8
Operating ModeENHANCEMENT
Number of Terminals8
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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