Photodetector Transistors PHOTO TRANSISTOR 1.6mm, 400-1200nm

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Product Information

Maximum Power Dissipation	75 mW
Collector- Emitter Voltage VCEO Max	35 V
Collector-Emitter Saturation Voltage	0.4 V
Fall Time	15 us
Maximum Operating Temperature	+ 85 C
Minimum Operating Temperature	- 25 C
Packaging	Bulk
Product	Phototransistor
Rise Time	15 us
Factory Pack Quantity	500
Wavelength	860 nm

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