Phototransistor IR Chip Silicon 900nm 2-Pin T-1

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Product Information

Polarity	NPN
Collector Current (DC)	0.015 A
Peak Wavelength	900 nm
Collector Current (DC) (Max)	0.015 A
Collector-Emitter Voltage	35 V
Mounting	Through Hole
Rad Hardened	No
Light Current	7200 uA
Operating Temperature Classification	Industrial
Power Dissipation	0.165 W
Operating Temp Range	-40C to 100C
Package Type	T-1
Number of Elements	1
Dark Current	200 nA
Phototransistor Type	Phototransistor
Rise Time	8000 ns
Collector-Emitter Sat Volt (max)	0.2 V
Pin Count	2
Half-Intensity Angle	24 deg
Fall Time	8000 ns

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