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1.4 A, 500 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
PHX1N50E
Manufacturer:
NXP Semiconductors
Product Range:
Transistors (BJT)
PHX1N50E

Product Information

StatusACTIVE
Package Body MaterialPLASTIC/EPOXY
Channel TypeN-CHANNEL
Pulsed Drain Current-Max (IDM)5.6 A
Terminal FormTHROUGH-HOLE
Operating ModeENHANCEMENT
Number of Terminals3
Avalanche Energy Rating (Eas)120 mJ
Transistor ApplicationSWITCHING
Drain Current-Max (ID)1.4 A
Case ConnectionISOLATED
Transistor Element MaterialSILICON
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
Terminal PositionSINGLE
Transistor TypeGENERAL PURPOSE POWER
Package ShapeRECTANGULAR
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max5 ohm
Package StyleFLANGE MOUNT
DS Breakdown Voltage-Min500 V
Number of Elements1


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