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512M X 4 DDR DRAM, 0.4 ns, PBGA63

Part No.:
NT5TU512T4DY-AD
Manufacturer:
Nanya
Product Range:
Memory
NT5TU512T4DY-AD

Product Information

Terminal Pitch0.8000 mm
Terminal FormBALL
Number of Words Code512M
Organization512M X 4
Supply Voltage-Nom (Vsup)1.8 V
Package ShapeRECTANGULAR
StatusACTIVE-UNCONFIRMED
Number of Words5.37E8 words
Package Body MaterialPLASTIC/EPOXY
Number of Functions1
Memory Density2.15E9 deg
Supply Voltage-Max (Vsup)1.9 V
Number of Ports1
Supply Voltage-Min (Vsup)1.7 V
Access ModeMULTI BANK PAGE BURST
Memory Width4
Surface MountYes
Mfr Package DescriptionBGA-63
Operating ModeSYNCHRONOUS
Number of Terminals63
Terminal PositionBOTTOM
Access Time-Max (tRAC)0.4000 ns
TechnologyCMOS
Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH
Memory IC TypeDDR DRAM


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