256M X 4 DDR DRAM, 0.4 ns, PBGA60

The actual product may differ from image shown

Product Information

Terminal Pitch	0.8000 mm
Access Mode	MULTI BANK PAGE BURST
Terminal Form	BALL
Operating Temperature-Max	85 Cel
Number of Words Code	256M
Supply Voltage-Nom (Vsup)	1.5 V
Temperature Grade	OTHER
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	0.0 Cel
Number of Words	2.68E8 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	1.07E9 deg
Supply Voltage-Max (Vsup)	1.63 V
Number of Ports	1
Supply Voltage-Min (Vsup)	1.42 V
Organization	256M X 4
Memory Width	4
Surface Mount	Yes
Mfr Package Description	0.80 MM PITCH, ROHS COMPLIANT, BGA-60
Operating Mode	SYNCHRONOUS
Number of Terminals	60
Terminal Position	BOTTOM
Access Time-Max (tRAC)	0.4000 ns
Technology	CMOS
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH
Memory IC Type	DDR DRAM

Offer your acceptable price, and we may make you satisfied.Your Target Price