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Home Semiconductors - ICs Memory 128M X 4 DDR DRAM, 0.4 ns, PBGA60

128M X 4 DDR DRAM, 0.4 ns, PBGA60

128M X 4 DDR DRAM, 0.4 ns, PBGA60

The actual product may differ from image shown

Part No.:: NT5TB128M4CE-25C
Manufacturer:: Nanya
Product Range:: Memory
Datasheet:: NT5TB128M4CE-25C

Product Information

Terminal Pitch	0.8000 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	BALL
Operating Temperature-Max	85 Cel
Number of Words Code	128M
Supply Voltage-Nom (Vsup)	1.5 V
Temperature Grade	OTHER
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	0.0 Cel
Number of Words	1.34E8 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	5.37E8 deg
Supply Voltage-Max (Vsup)	1.62 V
Number of Ports	1
Supply Voltage-Min (Vsup)	1.42 V
Organization	128M X 4
Memory Width	4
Surface Mount	Yes
Mfr Package Description	0.80 MM PITCH, ROHS COMPLIANT, BGA-60
Operating Mode	SYNCHRONOUS
Number of Terminals	60
Terminal Position	BOTTOM
Access Time-Max (tRAC)	0.4000 ns
Technology	CMOS
Package Style	GRID ARRAY
Memory IC Type	DDR DRAM

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