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Home Semiconductors - ICs Memory 64M X 4 DDR DRAM, 0.65 ns, PBGA60

64M X 4 DDR DRAM, 0.65 ns, PBGA60

64M X 4 DDR DRAM, 0.65 ns, PBGA60

The actual product may differ from image shown

Part No.:: NT5DS64M4BF-5T
Manufacturer:: Nanya
Product Range:: Memory
Datasheet:: NT5DS64M4BF-5T

Product Information

Terminal Finish	NOT SPECIFIED
Terminal Pitch	1 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	BALL
Operating Temperature-Max	70 Cel
Number of Words Code	64M
Supply Voltage-Nom (Vsup)	2.6 V
Temperature Grade	COMMERCIAL
Package Shape	RECTANGULAR
Status	ACTIVE-UNCONFIRMED
Operating Temperature-Min	0.0 Cel
Number of Words	6.71E7 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	2.68E8 deg
Supply Voltage-Max (Vsup)	2.7 V
Number of Ports	1
Supply Voltage-Min (Vsup)	2.5 V
Organization	64M X 4
Memory Width	4
Surface Mount	Yes
Mfr Package Description	CSP-60
Operating Mode	SYNCHRONOUS
Number of Terminals	60
Terminal Position	BOTTOM
Access Time-Max (tRAC)	0.6500 ns
Technology	CMOS
Package Style	GRID ARRAY
Memory IC Type	DDR DRAM

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