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Home Semiconductors - ICs Memory 128M X 4 DDR DRAM, 0.65 ns, PDSO66

128M X 4 DDR DRAM, 0.65 ns, PDSO66

128M X 4 DDR DRAM, 0.65 ns, PDSO66

The actual product may differ from image shown

Part No.:: NT5DS128M4BT-5TI
Manufacturer:: Nanya
Product Range:: Memory
Datasheet:: NT5DS128M4BT-5TI

Product Information

Terminal Pitch	0.6500 mm
Access Mode	FOUR BANK PAGE BURST
Terminal Form	GULL WING
Operating Temperature-Max	85 Cel
Number of Words Code	128M
Supply Voltage-Nom (Vsup)	2.6 V
Temperature Grade	INDUSTRIAL
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	-40 Cel
Number of Words	1.34E8 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Memory Density	5.37E8 deg
Supply Voltage-Max (Vsup)	2.7 V
Number of Ports	1
Supply Voltage-Min (Vsup)	2.5 V
Organization	128M X 4
Memory Width	4
Surface Mount	Yes
Mfr Package Description	0.400 INCH, TSSOP2-66
Operating Mode	SYNCHRONOUS
Number of Terminals	66
Terminal Position	DUAL
Access Time-Max (tRAC)	0.6500 ns
Technology	CMOS
Package Style	SMALL OUTLINE
Memory IC Type	DDR DRAM

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