2 A, 600 V, 6.4 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Form	GULL WING
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	2 A
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	6.4 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	6 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	600 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	TO-220S, 3 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	SINGLE
Number of Elements	1
Package Style	SMALL OUTLINE

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