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Home Semiconductors - ICs Memory 2M X 18 DDR SRAM, 0.45 ns, PBGA165

2M X 18 DDR SRAM, 0.45 ns, PBGA165

2M X 18 DDR SRAM, 0.45 ns, PBGA165

The actual product may differ from image shown

Part No.:: U757A-200M3I
Manufacturer:: ISSI
Product Range:: Memory
Datasheet:: U757A-200M3I

Product Information

Terminal Finish	TIN LEAD
Terminal Pitch	1 mm
Terminal Form	BALL
Operating Temperature-Max	85 Cel
Number of Words Code	2M
Supply Voltage-Nom (Vsup)	1.8 V
Temperature Grade	INDUSTRIAL
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	-40 Cel
Number of Words	2.10E6 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Access Time-Max (tACC)	0.4500 ns
Memory Density	3.77E7 deg
Supply Voltage-Max (Vsup)	1.89 V
Supply Voltage-Min (Vsup)	1.71 V
Organization	2M X 18
Memory Width	18
Surface Mount	Yes
Parallel/Serial	PARALLEL
Mfr Package Description	15 X 17 MM, 1 MM PITCH, FBGA-165
Operating Mode	SYNCHRONOUS
Number of Terminals	165
Terminal Position	BOTTOM
Technology	CMOS
Package Style	GRID ARRAY, LOW PROFILE
Memory IC Type	DDR SRAM

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