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Home Semiconductors - ICs Memory 128K X 32 CACHE SRAM, 3.1 ns, PBGA119

128K X 32 CACHE SRAM, 3.1 ns, PBGA119

128K X 32 CACHE SRAM, 3.1 ns, PBGA119

The actual product may differ from image shown

Part No.:: IS61LP12832-200BI
Manufacturer:: ISSI
Product Range:: Memory
Datasheet:: IS61LP12832-200BI

Product Information

Terminal Finish	TIN LEAD
Terminal Pitch	1.27 mm
Terminal Form	BALL
Operating Temperature-Max	85 Cel
Number of Words Code	128K
Supply Voltage-Nom (Vsup)	3.3 V
Temperature Grade	INDUSTRIAL
Package Shape	RECTANGULAR
Status	ACTIVE
Operating Temperature-Min	-40 Cel
Number of Words	131072 words
Package Body Material	PLASTIC/EPOXY
Number of Functions	1
Access Time-Max (tACC)	3.1 ns
Memory Density	4.19E6 deg
Supply Voltage-Max (Vsup)	3.63 V
Supply Voltage-Min (Vsup)	3.14 V
Organization	128K X 32
Memory Width	32
Surface Mount	Yes
Parallel/Serial	PARALLEL
Mfr Package Description	PLASTIC, BGA-119
Operating Mode	SYNCHRONOUS
Number of Terminals	119
Terminal Position	BOTTOM
Technology	CMOS
Package Style	GRID ARRAY
Memory IC Type	CACHE SRAM

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