1200 V, N-CHANNEL IGBT

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Product Information

Status	ACTIVE
Channel Type	N-CHANNEL
Package Body Material	UNSPECIFIED
Mfr Package Description	13.62 X 13.87 MM, DIE-3
Terminal Form	NO LEAD
Package Style	UNCASED CHIP
Collector-emitter Voltage-Max	1200 V
Transistor Application	POWER CONTROL
Number of Elements	1
Transistor Element Material	SILICON
Terminal Position	UPPER
Transistor Type	INSULATED GATE BIPOLAR
Package Shape	RECTANGULAR
Configuration	SINGLE WITH BUILT-IN RESISTOR
Number of Terminals	3
Surface Mount	Yes

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