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10 A, 80 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
BSZ123N08NS3GXT
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSZ123N08NS3GXT

Product Information

Terminal FinishMATTE TIN
Terminal FormNO LEAD
Avalanche Energy Rating (Eas)110 mJ
Package ShapeSQUARE
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)10 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0123 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)160 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min80 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TSDSON-8
Operating ModeENHANCEMENT
Number of Terminals5
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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