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1.17 A, 60 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET

Part No.:
BSP315PH6327
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSP315PH6327

Product Information

Terminal FinishMATTE TIN
Terminal FormGULL WING
Power Dissipation Ambient-Max1.8 W
Avalanche Energy Rating (Eas)24 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)1.17 A
EU RoHS CompliantYes
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.8000 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)4.68 A
Channel TypeP-CHANNEL
China RoHS CompliantYes
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min60 V
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC PACKAGE-4
Operating ModeENHANCEMENT
Number of Terminals4
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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