0.19 A, 800 V, 20 ohm, N-CHANNEL, Si, POWER, MOSFET

The actual product may differ from image shown

Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Power Dissipation Ambient-Max	1.8 W
Avalanche Energy Rating (Eas)	36 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.1900 A
Configuration	SINGLE
Drain-source On Resistance-Max	20 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	0.7600 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	800 V
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	PLASTIC PACKAGE-4
Operating Mode	ENHANCEMENT
Number of Terminals	4
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

Offer your acceptable price, and we may make you satisfied.Your Target Price