0.45 A, 400 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	MATTE TIN
Terminal Form	GULL WING
Power Dissipation Ambient-Max	1.5 W
Avalanche Energy Rating (Eas)	130 mJ
Package Shape	RECTANGULAR
Status	DISCONTINUED
Lead Free	Yes
Package Body Material	PLASTIC/EPOXY
Transistor Element Material	SILICON
Drain Current-Max (ID)	0.4500 A
EU RoHS Compliant	Yes
Configuration	SINGLE
Drain-source On Resistance-Max	3 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	2 A
Channel Type	N-CHANNEL
China RoHS Compliant	Yes
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	400 V
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	SOT-223, 4 PIN
Operating Mode	ENHANCEMENT
Number of Terminals	4
Terminal Position	DUAL
Number of Elements	1
Package Style	SMALL OUTLINE

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