18 A, 30 V, 0.0059 ohm, N-CHANNEL, Si, POWER, MOSFET

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Product Information

Terminal Finish	NOT SPECIFIED
Terminal Form	NO LEAD
Avalanche Energy Rating (Eas)	30 mJ
Package Shape	RECTANGULAR
Status	ACTIVE
Lead Free	Yes
Package Body Material	METAL
Transistor Element Material	SILICON
Drain Current-Max (ID)	18 A
EU RoHS Compliant	Yes
Configuration	SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max	0.0059 ohm
Transistor Type	GENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)	252 A
Channel Type	N-CHANNEL
FET Technology	METAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min	30 V
Transistor Application	SWITCHING
Surface Mount	Yes
Case Connection	DRAIN
Mfr Package Description	GREEN, METAL, WDSON-2
Operating Mode	ENHANCEMENT
Number of Terminals	2
Terminal Position	BOTTOM
Number of Elements	1
Package Style	CHIP CARRIER

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