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12 A, 60 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET

Part No.:
BSC100N06LS3GXT
Manufacturer:
Infineon Technologies
Product Range:
Transistors (BJT)
BSC100N06LS3GXT

Product Information

Terminal FinishMATTE TIN
Terminal FormFLAT
Avalanche Energy Rating (Eas)22 mJ
Package ShapeRECTANGULAR
StatusACTIVE
Lead FreeYes
Package Body MaterialPLASTIC/EPOXY
Transistor Element MaterialSILICON
Drain Current-Max (ID)12 A
ConfigurationSINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max0.0100 ohm
Transistor TypeGENERAL PURPOSE POWER
Pulsed Drain Current-Max (IDM)200 A
Channel TypeN-CHANNEL
FET TechnologyMETAL-OXIDE SEMICONDUCTOR
DS Breakdown Voltage-Min60 V
Transistor ApplicationSWITCHING
Surface MountYes
Case ConnectionDRAIN
Mfr Package DescriptionGREEN, PLASTIC, TDSON-8
Operating ModeENHANCEMENT
Number of Terminals5
Terminal PositionDUAL
Number of Elements1
Package StyleSMALL OUTLINE


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